Datasheet > IRHLG7S7110SCS

IRHLG7S7110SCS

更新时间： 2024-10-31 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	390K
描述
100V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET in a MO-036AB package - Screening Level Space

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IRHLG7S7110SCS 数据手册

PD-97887

IRHLG7S7110

2N7612M1

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (MO-036AB)

100V, QUAD N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHLG7S7110

IRHLG7S3110

100 kRads(Si)

300 kRads(Si)

1.8A

0.33

Description

MO-036AB

IRHLG7S7110 is part of the International Rectifier HiRel

family of products. IR HiRel R7 S-line Logic Level Power

MOSFETs provide simple solution to interfacing CMOS

and TTL control circuits to power devices in space and

other radiation environments. The threshold voltage

remains within acceptable operating limits over the full

operating temperature and post radiation. This is achieved

while maintaining single event gate rupture and single

event burnout immunity.

Features

 5V CMOS and TTL Compatible

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may

also be used to increase the output current of a PWM,

voltage comparator or an operational amplifier where the

logic level drive signal is available.

 Hermetically Sealed

 Light Weight

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings (Per Die)

Parameter

Pre-Irradiation

Units

1.8

I_D@ V_GS= 4.5V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 4.5V, T_C= 100°C Continuous Drain Current

1.1

7.2

I_DM

Pulsed Drain Current 

1.4

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

0.01

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 10

V_GS

E_AS

I_AR

1.8

0.14

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

1.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2017-10-13

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

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与IRHLG7S7110SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHLG7S7214	INFINEON	获取价格	250V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET in a MO-036AB package - A IRHLG7S72
IRHLG7S7214SCS	INFINEON	获取价格	Small Signal Field-Effect Transistor,
IRHLMS77064	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-254A
IRHLMS77064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-254A
IRHLMS797064	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-25
IRHLMS797064SCS	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-25
IRHLNA73064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA77064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA77064SCS	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHLNA77064SCSA	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si)

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