Datasheet > IRHLMS77064

IRHLMS77064

更新时间： 2024-09-16 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	968K
描述
Rad hard, 60V, 45A, single, N-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-254AA Tabless, 100 krad(Si) TID, COTS

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IRHLMS77064 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Base Number Matches：	1

IRHLMS77064 数据手册

PD-97836A

IRHLMS77064

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

60V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHLMS77064

IRHLMS73064

100 kRads(Si)

300 kRads(Si)

45A*

0.012

Low-Ohmic

TO-254AA

Description

IR HiRel R7 Logic Level Power MOSFETs provide simple

solution to interfacing CMOS and TTL control circuits to

power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating

limits over the full operating temperature and post

radiation. This is achieved while maintaining single event

gate rupture and single event burnout immunity.

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may

also be used to increase the output current of a PWM,

voltage comparator or an operational amplifier where the

logic level drive signal is available.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 4.5V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 4.5V, T_C= 100°C Continuous Drain Current

45*

180

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

208

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

1.67

V_GS

E_AS

I_AR

± 10

1400

E_AR

dv/dt

T_J

20.8

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

2.6

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

*Current is limited by package

For footnotes refer to the page 2.

2021-04-23

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHLMS77064相关器件

型号	品牌	获取价格	描述	数据表
IRHLMS77064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-254A
IRHLMS797064	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-25
IRHLMS797064SCS	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-25
IRHLNA73064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA77064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA77064SCS	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHLNA77064SCSA	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHLNA793064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA793064SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNA797064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)

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