Datasheet > IRHLG7S7214

IRHLG7S7214

更新时间： 2024-09-17 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	459K
描述
250V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET in a MO-036AB package - A IRHLG7S7214 with RadHard Hermetic Packaging

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IRHLG7S7214 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

IRHLG7S7214 数据手册

PD-97832A

IRHLG7S7214

2N7614M1

250V, Quad N-CHANNEL

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (MO-036AB)

TECHNOLOGY

Product Summary

Part Number

IRHLG7S7214

IRHLG7S3214

Radiation Level RDS(on)

I_D

100 kRads(Si)

300 kRads(Si)

0.8A

1.1

MO-036AB

Description

Features

 5V CMOS and TTL Compatible

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

IR HiRel R7 Logic Level Power MOSFETs provide simple

solution to interfacing CMOS and TTL control circuits to power

devices in space and other radiation environments. The

threshold voltage remains within acceptable operating limits

over the full operating temperature and post radiation. This is

achieved while maintaining single event gate rupture and

single event burnout immunity.

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be used

to increase the output current of a PWM, voltage comparator

or an operational amplifier where the logic level drive signal is

available.

 Light Weight

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 4.5V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 4.5V, T_C= 100°C Continuous Drain Current

0.8

0.5

3.2

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

1.4

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.01

±10

50.4

0.8

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

0.14

12.3

-55 to + 150

T_STG

°C

300 (0.063in/1.6mm from case for 10s)

1.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2019-02-25

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

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与IRHLG7S7214相关器件

型号	品牌	获取价格	描述	数据表
IRHLG7S7214SCS	INFINEON	获取价格	Small Signal Field-Effect Transistor,
IRHLMS77064	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-254A
IRHLMS77064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-254A
IRHLMS797064	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-25
IRHLMS797064SCS	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R7 in a TO-254AA Low Ohmic package - TO-25
IRHLNA73064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA77064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
IRHLNA77064SCS	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHLNA77064SCSA	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHLNA793064	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)

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