IRHG93110

更新时间： 2024-09-15 21:54:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管开关
页数	文件大小	规格书
8页	121K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)

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IRHG93110 数据手册

PD - 93819B

IRHG9110

100V, QUAD P-CHANNEL

RAD-Hard^™HEXFET^®

RADIATION HARDENED

POWER MOSFET

MOSFET TECHNOLOGY

THRU-HOLE (MO-036AB)

Product Summary

Part Number Radiation Level RDS(on)

IRHG9110

100K Rads (Si)

1.1Ω

-0.75A

IRHG93110

300K Rads (Si) 1.1Ω

MO-036AB

Features:

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite applica-

tions. These devices have been characterized for both

Total Dose and Single Event Effects (SEE). The combina-

tion of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC con-

verters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and tempera-

ture stability of electrical parameters.

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

-0.75

= 12V, T = 100°C Continuous Drain Current

-0.5

-3.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt

Operating Junction

@ T = 25°C

1.4

W/°C

0.011

±20

-0.75

0.14

dv/dt

V/ns

2.4 ➀

-55 to 150

Storage Temperature Range

Lead Temperature

^oC

STG

300 (0.63in./1.6mm from case for 10s)

1.3 (Typical)

Weight

For footnotes refer to the last page

www.irf.com

02/20/03

12 3 4 5 6 7 8

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