生命周期: | Active | 包装说明: | IN-LINE, R-CDIP-T14 |
Reach Compliance Code: | compliant | 风险等级: | 5.71 |
雪崩能效等级(Eas): | 130 mJ | 配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 1.8 A |
最大漏极电流 (ID): | 1.8 A | 最大漏源导通电阻: | 0.29 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MO-036AB |
JESD-30 代码: | R-CDIP-T14 | 元件数量: | 4 |
端子数量: | 14 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.4 W | 最大脉冲漏极电流 (IDM): | 6.4 A |
参考标准: | MIL-19500 | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 45 ns | 最大开启时间(吨): | 37 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHG58110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) | |
IRHG58110PBF | INFINEON |
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暂无描述 | |
IRHG593110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHG597110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHG597110SCS | INFINEON |
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Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Met | |
IRHG6110 | INFINEON |
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100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY | |
IRHG6110SCS | INFINEON |
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Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, | |
IRHG63110 | INFINEON |
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100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY | |
IRHG7110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHG7110SCS | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal- |