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IRHG57110SCS PDF预览

IRHG57110SCS

更新时间: 2024-11-06 14:56:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1372K
描述
100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard Packaging

IRHG57110SCS 技术参数

生命周期:Active包装说明:IN-LINE, R-CDIP-T14
Reach Compliance Code:compliant风险等级:5.71
雪崩能效等级(Eas):130 mJ配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):1.8 A
最大漏极电流 (ID):1.8 A最大漏源导通电阻:0.29 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-036AB
JESD-30 代码:R-CDIP-T14元件数量:4
端子数量:14工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.4 W最大脉冲漏极电流 (IDM):6.4 A
参考标准:MIL-19500表面贴装:NO
端子形式:THROUGH-HOLE端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):45 ns最大开启时间(吨):37 ns
Base Number Matches:1

IRHG57110SCS 数据手册

 浏览型号IRHG57110SCS的Datasheet PDF文件第2页浏览型号IRHG57110SCS的Datasheet PDF文件第3页浏览型号IRHG57110SCS的Datasheet PDF文件第4页浏览型号IRHG57110SCS的Datasheet PDF文件第5页浏览型号IRHG57110SCS的Datasheet PDF文件第6页浏览型号IRHG57110SCS的Datasheet PDF文件第7页 
IRHG57110  
PD-94432E  
Radiation Hardened Power MOSFET  
Thru – Hole (MO-036AB)  
100V, 1.6A, Quad N-channel, R5 Technology  
Features  
Product Summary  
Single event effect (SEE) hardened  
BVDSS: 100V  
ID : 1.6A  
RDS(on),max : 0.29  
QG,max : 17nC  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Ceramic package  
Light weight  
ESD rating: Class 1A per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
MO-036AB  
Product Validation  
Qualified according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R5 technology provides high performance power MOSFETs for space applications. This technology has  
over a decade of proven performance and reliability in satellite applications. These devices have been  
characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications such as DC to DC converters and motor control. These  
devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHG57110  
Ordering options  
Package  
LCC-28  
Screening Level  
COTS  
TID Level  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
500 krad(Si)  
500 krad(Si)  
IRHG57110SCV  
IRHG53110  
LCC-28  
JANTXV-equivalent  
COTS  
LCC-28  
IRHG53110SCV  
IRHG54110  
LCC-28  
JANTXV-equivalent  
COTS  
LCC-28  
IRHG54110SCV  
LCC-28  
JANTXV-equivalent  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2022-05-26  
 
 
 
 
 

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