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IRHG9110SCS

更新时间： 2024-11-06 19:52:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 120K
描述
Small Signal Field-Effect Transistor, 0.75A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,

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IRHG9110SCS 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.76配置：SEPARATE, 4 ELEMENTS
最小漏源击穿电压：100 V最大漏极电流 (ID)：0.75 A
最大漏源导通电阻：1.2 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MO-036ABJESD-30 代码：R-CDIP-T14
JESD-609代码：e0元件数量：4
端子数量：14工作模式：ENHANCEMENT MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHG9110SCS 数据手册

 浏览型号IRHG9110SCS的Datasheet PDF文件第2页浏览型号IRHG9110SCS的Datasheet PDF文件第3页浏览型号IRHG9110SCS的Datasheet PDF文件第4页浏览型号IRHG9110SCS的Datasheet PDF文件第5页浏览型号IRHG9110SCS的Datasheet PDF文件第6页浏览型号IRHG9110SCS的Datasheet PDF文件第7页 
PD - 93819A  
IRHG9110  
100V, QUAD P-CHANNEL  
RAD-Hard™ HEXFET®  
RADIATION HARDENED  
POWER MOSFET  
MOSFET TECHNOLOGY  
THRU-HOLE (MO-036AB)  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHG9110  
100K Rads (Si)  
1.1Ω  
-0.75A  
-0.75A  
IRHG93110  
300K Rads (Si) 1.1Ω  
MO-036AB  
Features:  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
Technology provides high performance power MOSFETs  
for space applications. This technology has over a decade  
of proven performance and reliability in satellite applica-  
tions. These devices have been characterized for both  
Total Dose and Single Event Effects (SEE). The combina-  
tion of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC con-  
verters and motor control. These devices retain all of the  
well established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and tempera-  
ture stability of electrical parameters.  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings (Per Die)  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
-0.75  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
-0.5  
-3.0  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
1.4  
W
W/°C  
V
D
C
Linear Derating Factor  
0.011  
±20  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
GS  
E
75  
mJ  
A
AS  
I
-0.75  
0.14  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt  
Operating Junction  
mJ  
V/ns  
2.4 ➀  
-55 to 150  
T
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.63in./1.6mm from case for 10s)  
1.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/03/01  
12345678

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