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IRHG597110SCS PDF预览

IRHG597110SCS

更新时间： 2024-11-05 20:00:55
品牌 Logo 应用领域
英飞凌 - INFINEON 开关晶体管
页数 文件大小 规格书
8页 117K
描述
Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14

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IRHG597110SCS 数据手册

 浏览型号IRHG597110SCS的Datasheet PDF文件第2页浏览型号IRHG597110SCS的Datasheet PDF文件第3页浏览型号IRHG597110SCS的Datasheet PDF文件第4页浏览型号IRHG597110SCS的Datasheet PDF文件第5页浏览型号IRHG597110SCS的Datasheet PDF文件第6页浏览型号IRHG597110SCS的Datasheet PDF文件第7页 
PD - 94431  
IRHG597110  
100V, Quad P-CHANNEL  
RAD-Hard™ HEXFET®  
RADIATION HARDENED  
POWER MOSFET  
TECHNOLOGY  
THRU-HOLE (MO-036AB)  
R
5
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHG597110 100K Rads (Si)  
IRHG593110 300K Rads (Si)  
0.96Ω -0.96A  
0.98Ω -0.96A  
MO-036AB  
Features:  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
Technology provides high performance power MOSFETs  
for space applications. This technology has over a decade  
of proven performance and reliability in satellite applica-  
tions. These devices have been characterized for both  
Total Dose and Single Event Effects (SEE). The combina-  
tion of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC con-  
verters and motor control. These devices retain all of the  
well established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and tempera-  
ture stability of electrical parameters.  
n
Single Event Effect (SEE) Hardened  
n
n
n
n
n
n
n
n
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings ( Per Die)  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-0.96  
D
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
-0.6  
-3.84  
1.4  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
Linear Derating Factor  
0.011  
±20  
V
Gate-to-Source Voltage  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
200  
mJ  
A
AS  
I
-0.96  
0.14  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
mJ  
V/ns  
Peak Diode Recovery dv/dt  
Operating Junction  
➀
7.1  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.63 in./1.6mm from case for 10s)  
1.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
04/15/02  
12345678

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