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IRHG54110PBF PDF预览

IRHG54110PBF

更新时间: 2024-11-05 19:50:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 119K
描述
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14

IRHG54110PBF 数据手册

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PD - 94432B  
IRHG57110  
100V, Q5uad N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (MO-036)  
TECHNOLOGY  
ꢁ  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHG57110 100K Rads (Si)  
IRHG53110 300K Rads (Si)  
IRHG54110 500K Rads (Si)  
0.29Ω  
0.29Ω  
0.29Ω  
1.6A  
1.6A  
1.6A  
1.6A  
IRHG58110 1000K Rads (Si) 0.31Ω  
MO-036AB  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings (Per Die)  
Parameter  
Pre-Irradiation  
Units  
I
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
1.6  
D
GS  
GS  
C
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
1.0  
6.4  
A
D
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
1.4  
W
W/°C  
V
D
C
Linear Derating Factor  
0.011  
±20  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
GS  
E
130  
mJ  
A
AS  
I
1.6  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
0.14  
mJ  
V/ns  
AR  
dv/dt  
6.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.63 in./1.6 mm from case for 10s)  
1.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/02/06  

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