是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.92 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.4 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHG7214PBF | INFINEON |
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Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Met | |
IRHG8110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHG8214 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE | |
IRHG9110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHG9110SCS | INFINEON |
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Small Signal Field-Effect Transistor, 0.75A I(D), 100V, 4-Element, P-Channel, Silicon, Met | |
IRHG9110SCV | INFINEON |
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Small Signal Field-Effect Transistor, | |
IRHG93110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHI7360SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A) | |
IRHI7360SESCS | INFINEON |
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Power Field-Effect Transistor, | |
IRHI7460SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A) |