Datasheet > IRHG563110

IRHG563110

更新时间： 2024-09-15 03:36:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	182K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL

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IRHG563110 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.84
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IRHG563110 数据手册

PD - 94246B

IRHG567110

100V, Combination 2N-2P-CHANNEL

RAD-Hard^™HEXFET^®

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (MO-036AB)

Product Summary

Part Number Radiation Level RDS(on)

CHANNEL

IRHG567110 100K Rads (Si)

IRHG563110 300K Rads (Si)

IRHG567110 100K Rads (Si)

IRHG563110 300K Rads (Si)

0.29Ω

1.6A

0.96Ω -0.96A

MO-036AB

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite applica-

tions. These devices have been characterized for both

Total Dose and Single Event Effects (SEE). The combina-

tion of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC con-

verters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and tempera-

ture stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

=± 12V, T = 25°C Continuous Drain Current

N-Channel

P-Channel

-0.96

-0.6

Units

@ V

1.6

=± 12V, T = 100°C Continuous Drain Current

1.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

6.4

-3.84

1.4

@ T = 25°C

1.4

W/°C

0.011

±20

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current ➀

130 ➀

1.6

200 ➀

-0.96

0.14

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt

Operating Junction

0.14

6.5 ➀

V/ns

7.1 ➀

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

09/05/02

12 3 4 5 6 7...14

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与IRHG563110相关器件

型号	品牌	获取价格	描述	数据表
IRHG567110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
IRHG567110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel and P-Channe
IRHG567110SCS	INFINEON	获取价格	暂无描述
IRHG57110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG57110SCS	INFINEON	获取价格	100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard P
IRHG58110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG58110PBF	INFINEON	获取价格	暂无描述
IRHG593110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
IRHG597110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
IRHG597110SCS	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Met

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