IRHG6110SCS

更新时间： 2024-09-16 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
14页	193K
描述
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB

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IRHG6110SCS 数据手册

PD - 93783E

IRHG6110

100V, Combination 2N-2P-CHANNEL

RAD-Hard^™HEXFET^®

RADIATION HARDENED

POWER MOSFET

MOSFET TECHNOLOGY

THRU-HOLE (MO-036AB)

Product Summary

Part Number Radiation Level RDS(on)

CHANNEL

IRHG6110

IRHG63110

IRHG6110

IRHG63110

100K Rads (Si)

300K Rads (Si)

100K Rads (Si)

0.6Ω

1.1Ω

1.0A

-0.75A

300K Rads (Si) 1.1Ω

MO-036AB

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite applica-

tions. These devices have been characterized for both

Total Dose and Single Event Effects (SEE). The combina-

tion of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC con-

verters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and tempera-

ture stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

=± 12V, T = 25°C Continuous Drain Current

N-Channel

P-Channel

-0.75

-0.5

Units

@ V

1.0

=± 12V, T = 100°C Continuous Drain Current

0.6

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

4.0

-3.0

@ T = 25°C

1.4

W/°C

0.011

±20

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current ➀

56 ➀

1.0

75➀➀

-0.75

0.14

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt

Operating Junction

0.14

2.4 ➀

V/ns

2.4 ➀

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

07/17/01

12 3 4 5 6 7...14

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与IRHG6110SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHG63110	INFINEON	获取价格	100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
IRHG7110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
IRHG7110SCS	INFINEON	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-
IRHG7214	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHG7214PBF	INFINEON	获取价格	Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Met
IRHG8110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
IRHG8214	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHG9110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
IRHG9110SCS	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.75A I(D), 100V, 4-Element, P-Channel, Silicon, Met
IRHG9110SCV	INFINEON	获取价格	Small Signal Field-Effect Transistor,

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