是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-CDIP-T14 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 130 mJ |
配置: | SEPARATE, 4 ELEMENTS | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 0.96 A | 最大漏极电流 (ID): | 1.6 A |
最大漏源导通电阻: | 0.29 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-036AB | JESD-30 代码: | R-CDIP-T14 |
JESD-609代码: | e0 | 元件数量: | 4 |
端子数量: | 14 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 1.4 W | 最大脉冲漏极电流 (IDM): | 6.4 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHG567110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel and P-Channe | |
IRHG567110SCS | INFINEON |
获取价格 |
暂无描述 | |
IRHG57110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) | |
IRHG57110SCS | INFINEON |
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100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard P | |
IRHG58110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) | |
IRHG58110PBF | INFINEON |
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暂无描述 | |
IRHG593110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHG597110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHG597110SCS | INFINEON |
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Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Met | |
IRHG6110 | INFINEON |
获取价格 |
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |