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IRHG567110

更新时间: 2024-11-05 03:36:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
14页 182K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL

IRHG567110 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:IN-LINE, R-CDIP-T14Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.32
Is Samacsys:N雪崩能效等级(Eas):130 mJ
配置:SEPARATE, 4 ELEMENTS最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):0.96 A最大漏极电流 (ID):1.6 A
最大漏源导通电阻:0.29 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-036ABJESD-30 代码:R-CDIP-T14
JESD-609代码:e0元件数量:4
端子数量:14工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):1.4 W最大脉冲漏极电流 (IDM):6.4 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHG567110 数据手册

 浏览型号IRHG567110的Datasheet PDF文件第2页浏览型号IRHG567110的Datasheet PDF文件第3页浏览型号IRHG567110的Datasheet PDF文件第4页浏览型号IRHG567110的Datasheet PDF文件第5页浏览型号IRHG567110的Datasheet PDF文件第6页浏览型号IRHG567110的Datasheet PDF文件第7页 
PD - 94246B  
IRHG567110  
100V, Combination 2N-2P-CHANNEL  
RAD-HardHEXFET®  
TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (MO-036AB)  
R
5
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
CHANNEL  
IRHG567110 100K Rads (Si)  
IRHG563110 300K Rads (Si)  
IRHG567110 100K Rads (Si)  
IRHG563110 300K Rads (Si)  
0.29Ω  
0.29Ω  
1.6A  
1.6A  
N
N
P
P
0.96-0.96A  
0.96-0.96A  
MO-036AB  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
Technology provides high performance power MOSFETs  
for space applications. This technology has over a decade  
of proven performance and reliability in satellite applica-  
tions. These devices have been characterized for both  
Total Dose and Single Event Effects (SEE). The combina-  
tion of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC con-  
verters and motor control. These devices retain all of the  
well established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and tempera-  
ture stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings (Per Die)  
Parameter  
=± 12V, T = 25°C Continuous Drain Current  
N-Channel  
P-Channel  
-0.96  
-0.6  
Units  
I
@ V  
@ V  
1.6  
D
GS  
C
A
I
=± 12V, T = 100°C Continuous Drain Current  
C
1.0  
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
6.4  
-3.84  
1.4  
DM  
@ T = 25°C  
P
1.4  
W
W/°C  
V
D
C
0.011  
±20  
0.011  
±20  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current ➀  
GS  
E
130 ➀  
1.6  
200 ➀  
-0.96  
0.14  
mJ  
A
AS  
I
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt  
Operating Junction  
0.14  
6.5 ➀  
mJ  
V/ns  
7.1 ➀  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.63 in./1.6 mm from case for 10s)  
1.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
09/05/02  

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