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IRHG7110 PDF预览

IRHG7110

更新时间: 2024-11-04 22:24:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 122K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)

IRHG7110 数据手册

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PD - 90670C  
IRHG7110  
100V, QUAD N-CHANNEL  
RAD-HardHEXFET®  
RADIATION HARDENED  
POWER MOSFET  
MOSFET TECHNOLOGY  
THRU-HOLE (MO-036AB)  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHG7110  
IRHG3110  
IRHG4110  
IRHG8110  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.6Ω  
0.6Ω  
0.6Ω  
1.0A  
1.0A  
1.0A  
1.0A  
1000K Rads (Si) 0.6Ω  
MO-036AB  
Features:  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
Technology provides high performance power MOSFETs  
for space applications. This technology has over a decade  
of proven performance and reliability in satellite applica-  
tions. These devices have been characterized for both  
Total Dose and Single Event Effects (SEE). The combina-  
tion of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC con-  
verters and motor control. These devices retain all of the  
well established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and tempera-  
ture stability of electrical parameters.  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings (Per Die)  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
1.0  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
0.6  
4.0  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
1.4  
W
W/°C  
V
D
C
Linear Derating Factor  
0.011  
±20  
V
Gate-to-Source Voltage  
GS  
E
Single Pulse Avalanche Energy➀  
Avalanche Current ➀  
56  
mJ  
A
AS  
I
1.0  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
0.14  
2.4  
mJ  
V/ns  
AR  
dv/dt  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.63in./1.6mm from case for 10s)  
1.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
07/17/01  

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