是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.39 | 其他特性: | RADIATION HARDENED |
配置: | SINGLE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 4.8 A | 最大漏源导通电阻: | 0.48 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF8234PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF9130 | INFINEON |
获取价格 |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | |
IRHF9230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET | |
IRHF9230PBF | INFINEON |
获取价格 |
暂无描述 | |
IRHF9230SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Meta | |
IRHF93130 | INFINEON |
获取价格 |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | |
IRHF93130PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me | |
IRHF93230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET | |
IRHG110 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 950MA I(D) | DIP | |
IRHG3110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |