型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHG3214PBF | INFINEON |
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Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Met | |
IRHG4110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | |
IRHG4110PBF | INFINEON |
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Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal- | |
IRHG4214 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE | |
IRHG4214PBF | INFINEON |
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Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Met | |
IRHG53110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) | |
IRHG53110PBF | INFINEON |
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Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Me | |
IRHG53110SCS | INFINEON |
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100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard P | |
IRHG54110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) | |
IRHG54110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Me |