Datasheet > IRHG53110PBF

IRHG53110PBF

更新时间： 2024-11-05 19:50:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	119K
描述
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14

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IRHG53110PBF 数据手册

PD - 94432B

IRHG57110

^{100V, Q}5^{uad N-CHANNEL}

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (MO-036)

TECHNOLOGY

ꢀꢁ

Product Summary

Part Number Radiation Level RDS(on)

IRHG57110 100K Rads (Si)

IRHG53110 300K Rads (Si)

IRHG54110 500K Rads (Si)

0.29Ω

1.6A

IRHG58110 1000K Rads (Si) 0.31Ω

MO-036AB

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings (Per Die)

Parameter

Pre-Irradiation

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

1.6

@ V

= 12V, T = 100°C Continuous Drain Current

1.0

6.4

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

1.4

W/°C

Linear Derating Factor

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

130

1.6

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

0.14

V/ns

dv/dt

6.5

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

05/02/06

12 3 4 5 6 7 8

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与IRHG53110PBF相关器件

型号	品牌	获取价格	描述	数据表
IRHG53110SCS	INFINEON	获取价格	100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard P
IRHG54110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG54110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Me
IRHG563110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
IRHG567110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
IRHG567110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel and P-Channe
IRHG567110SCS	INFINEON	获取价格	暂无描述
IRHG57110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG57110SCS	INFINEON	获取价格	100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard P
IRHG58110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)

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