Datasheet > IRHG4110PBF

IRHG4110PBF

更新时间： 2024-09-15 20:55:07

品牌	Logo	应用领域
英飞凌 - INFINEON		开关晶体管
页数	文件大小	规格书
8页	121K
描述
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, MO-036AB, 14 PIN

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IRHG4110PBF 数据手册

PD - 90670A

IRHG7110

100V, QUAD N-CHANNEL

RAD-Hard^™HEXFET^®

RADIATION HARDENED

POWER MOSFET

MOSFET TECHNOLOGY

THRU-HOLE (MO-036AB)

Product Summary

Part Number Radiation Level RDS(on)

IRHG7110

IRHG3110

IRHG4110

IRHG8110

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.6Ω

1.0A

1000K Rads (Si) 0.6Ω

MO-036AB

Features:

International Rectifier’s RAD-Hard^TMHEXFET^®MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite applica-

tions. These devices have been characterized for both

Total Dose and Single Event Effects (SEE). The combina-

tion of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC con-

verters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and tempera-

ture stability of electrical parameters.

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

1.0

= 12V, T = 100°C Continuous Drain Current

0.6

4.0

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

1.4

W/°C

Linear Derating Factor

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy➀

Avalanche Current ➀

1.0

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

0.14

2.4

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.63in./1.6mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

01/03/01

12 3 4 5 6 7 8

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与IRHG4110PBF相关器件

型号	品牌	获取价格	描述	数据表
IRHG4214	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHG4214PBF	INFINEON	获取价格	Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Met
IRHG53110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG53110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Me
IRHG53110SCS	INFINEON	获取价格	100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard P
IRHG54110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG54110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Me
IRHG563110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
IRHG567110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
IRHG567110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel and P-Channe

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