Datasheet > IRHF8110SCV

IRHF8110SCV

更新时间： 2024-11-18 19:32:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	677K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IRHF8110SCV 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.66
Base Number Matches：	1

IRHF8110SCV 数据手册

PD-90671G

IRHF7110

100V, N CHANNEL

RADIATION HARDENED

POWER MOSFET

RAD Hard™HEXFET ^®TECHNOLOGY

THRU-HOLE (TO-39)

Product Summary

Part Number

IRHF7110

IRHF3110

IRHF5110

IRHF8110

Radiation Level

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

RDS(on)

I_D

3.5A

0.6

0.7

TO-39

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Light Weight

 ESD Rating: Class 1A per MIL-STD-750, Method 1020

IR HiRel RAD-Hard HEXFET technology provides high

performance power MOSFETs for space applications.

This technology has over a decade of proven performance

and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event

Effects (SEE). The combination of low Rdson and low gate

charge reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

3.5

2.2

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.12

± 20

V_GS

E_AS

I_AR

3.5

1.5

5.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 (0.063 in.(1.6mm) from case for 10s)

0.98 (Typical)

Weight

For Footnotes, refer to the page 2

2019-07-29

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与IRHF8110SCV相关器件

型号	品牌	获取价格	描述	数据表
IRHF8130	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHF8130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met
IRHF8210	INFINEON	获取价格	Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me
IRHF8210PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me
IRHF8230	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR
IRHF8234	INFINEON	获取价格	Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me
IRHF8234PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me
IRHF9130	INFINEON	获取价格	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
IRHF9230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET
IRHF9230PBF	INFINEON	获取价格	暂无描述

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