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IRHF8110PBF PDF预览

IRHF8110PBF

更新时间： 2024-11-22 06:35:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 451K
描述
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN

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中文翻译

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IRHF8110PBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CYLINDRICAL, O-MBCY-W3Reach Compliance Code：compliant
风险等级：5.84其他特性：RADIATION HARDENED
雪崩能效等级（Eas）：68 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：3.5 A
最大漏源导通电阻：0.69 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-205AFJESD-30 代码：O-MBCY-W3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：14 A
表面贴装：NO端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

IRHF8110PBF 数据手册

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Absolute Maximum Ratings  
Parameter  
                                                                                                                               
                                                                                                                               
                                                                                                                                 
                                                                                                                                 
                                                                                                                                   
                                                                                                                                   
                                                                                                                                     
                                                                                                                                     
                                                                                                                                      
                                                                                                                                      
                                                                                                                                       
                                                                                                                                       
                                                                                                                                         
                                                                                                                                         
                                                                                                                                          
                                                                                                                                          
                                                                                                                                            
                                                                                                                                            
                                                                                                                                              
                                                                                                                                              
                                                                                                                                               
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                   
                                                                                                                                                     
                                                                                                                                                     
                                                                                                                               
                                                                                                                                 
                                                                                                                                   
                                                                                                                                     
                                                                                                                                      
                                                                                                                                       
                                                                                                                                         
                                                                                                                                          
                                                                                                                                            
                                                                                                                                              
                                                                                                                                               
                                                                                                                                                 
                                                                                                                                                  
                                                                                                                                                   
                                                                                                                                                     
PD - 90671D  
IRHF7110  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
®
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHF7110  
IRHF3110  
IRHF4110  
IRHF8110  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.60Ω  
0.60Ω  
0.60Ω  
3.5A  
3.5A  
3.5A  
3.5A  
1000K Rads (Si) 0.60Ω  
TO-39  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for both Total Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
C
3.5  
2.2  
14  
D
GS  
A
I
= 12V, T = 100°C Continuous Drain Current  
C
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
P
@ T = 25°C  
C
15  
W
W/°C  
V
D
0.12  
±20  
68  
V
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
A
AS  
I
AR  
—
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
AR  
—
dv/dt  
5.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
0.98 (Typical )  
Lead Temperature  
Weight  
g
For footnotes refer to the last page  
www.irf.com  
1
8/10/01  
1234567...12

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