Datasheet > IRHF7430SESCSPBF

IRHF7430SESCSPBF

更新时间： 2024-11-18 21:17:27

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
8页	126K
描述
Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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IRHF7430SESCSPBF 数据手册

PD - 91863B

IRHF7430SE

JANSR2N7464T2

500V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

REF: MIL-PRF-19500/676

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHF7430SE 100K Rads (Si)

1.65Ω

2.6A JANSR2N7464T2

TO-39

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Neuton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

2.6

= 12V, T = 100°C Continuous Drain Current

1.6

10.4

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

148

2.6

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

2.5

V/ns

dv/dt

8.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10 sec.)

0.98 (Typical)

For footnotes refer to the last page

www.irf.com

4/27/01

12 3 4 5 6 7 8

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与IRHF7430SESCSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHF8110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF8110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Me
IRHF8110SCV	INFINEON	获取价格	Power Field-Effect Transistor,
IRHF8130	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHF8130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met
IRHF8210	INFINEON	获取价格	Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me
IRHF8210PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me
IRHF8230	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR
IRHF8234	INFINEON	获取价格	Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me
IRHF8234PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me

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