是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
风险等级: | 5.19 | 其他特性: | RADIATION HARDENED |
雪崩能效等级(Eas): | 154 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 2.6 A |
最大漏极电流 (ID): | 2.5 A | 最大漏源导通电阻: | 1.77 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 25 W |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF7430SEPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF7430SESCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Met | |
IRHF7430SESCSPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Met | |
IRHF8110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
IRHF8110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF8110SCV | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHF8130 | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
IRHF8130PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met | |
IRHF8210 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF8210PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me |