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IRHF7310SE PDF预览

IRHF7310SE

更新时间： 2024-11-17 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 91K
描述
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=4.5ohm, Id=1.15A)

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IRHF7310SE 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：HERMETIC SEALED, TO-39, 3 PINReach Compliance Code：compliant
风险等级：5.76Is Samacsys：N
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：75 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：400 V
最大漏极电流 (ID)：1.15 A最大漏源导通电阻：5.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-204AF
JESD-30 代码：O-MBCY-W3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：4.6 A
认证状态：Not Qualified表面贴装：NO
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHF7310SE 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1444A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHF7310SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
400 Volt, 4.5Ω, (SEE) RAD HARD HEXFET  
Product Summary  
Part Number  
BVDSS  
RDS(on)  
ID  
International Rectifier’s (SEE)RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds. Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
IRHF7310SE  
400V  
4.5Ω  
1.15A  
Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
■ Hermetically Sealed  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Absolute Maximum Ratings  
Parameter  
IRHF7310SE  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
GS C  
1.15  
0.70  
4.6  
D
I
= 12V, T = 100°C Continuous Drain Current  
C
D
GS  
A
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
DM  
@ T = 25°C  
P
D
15  
W
W/K ➄  
V
C
2.0  
V
±20  
GS  
E
AS  
dv/dt  
75  
mJ  
4.0  
V/ns  
T
J
-55 to 150  
T
Storage Temperature Range  
Lead Temperature  
STG  
(0.063 in. (1.6mm) from  
case for 10 sec.)  
0.98 (typical)  
300  
oC  
g
Weight  
To Order  
 
 
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