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IRHF7330SE PDF预览

IRHF7330SE

更新时间: 2024-11-18 11:10:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 130K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF)

IRHF7330SE 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
风险等级:5.25Is Samacsys:N
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):144 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):2.9 A
最大漏源导通电阻:1.39 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-205AFJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):11.6 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHF7330SE 数据手册

 浏览型号IRHF7330SE的Datasheet PDF文件第2页浏览型号IRHF7330SE的Datasheet PDF文件第3页浏览型号IRHF7330SE的Datasheet PDF文件第4页浏览型号IRHF7330SE的Datasheet PDF文件第5页浏览型号IRHF7330SE的Datasheet PDF文件第6页浏览型号IRHF7330SE的Datasheet PDF文件第7页 
PD-91864B  
IRHF7330SE  
JANSR2N7463T2  
400V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-205AF)  
REF: MIL-PRF-19500/675  
RAD HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number  
Radiation Level  
RDS(on)  
ID QPL Part Number  
IRHF7330SE  
100K Rads (Si)  
1.39Ω  
2.9A JANSR2N7463T2  
TO-205AF  
International Rectifier’s RADHardTM HEXFET® MOSFET  
technology provides high performance power MOSFETs  
for space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been characterized  
for both Total Dose and Single Event Effects (SEE). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC to  
DC converters and motor control. These devices retain  
all of the well established advantages of MOSFETs such  
as voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
2.9  
1.8  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
11.6  
25  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
Linear Derating Factor  
0.2  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
144  
mJ  
A
AS  
I
2.9  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
6.7  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10 sec.)  
0.98 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
02/07/03  

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