是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.76 | 其他特性: | RADIATION HARDENED |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 2.25 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF7210PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF7230 | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR | |
IRHF7234 | INFINEON |
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Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF7234PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF7310 | ETC |
获取价格 |
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IRHF7310SE | INFINEON |
获取价格 |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=4.5ohm, Id=1.15A) | |
IRHF7330SE | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF) | |
IRHF7330SEPBF | INFINEON |
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暂无描述 | |
IRHF7330SESCSPBF | INFINEON |
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Power Field-Effect Transistor, 3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRHF7430SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |