Datasheet > IRHF67230_15

IRHF67230_15

更新时间： 2024-11-19 01:10:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	209K
描述
Simple Drive Requirements

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数据手册

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IRHF67230_15 数据手册

PD-97311

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

IRHF67230

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHF67230 100K Rads (Si)

0.145Ω 9.1A

IRHF63230 300K Rads (Si) 0.145Ω 9.1A

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer (LET)

up to 90MeV/(mg/cm²). Their combination of very low

T0-39

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

and faster switching times reduces power

DS(on)

loss and increases power density in today’s high

speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

9.1

= 12V, T = 100°C Continuous Drain Current

5.7

36.4

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

9.1

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

2.5

V/ns

dv/dt

4.8

-55 to 150

Storage Temperature Range

°C

STG

Lead Temperature

Weight

300 (0.063in/1.6mm from case for 10s)

0.98 (Typical)

For footnotes refer to the last page

www.irf.com

09/16/11

12 3 4 5 6 7...9

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