Datasheet > IRHF67234

IRHF67234

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	401K
描述
Rad hard, 250V, 9.5A, single, N-channel MOSFET, R6 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS

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IRHF67234 数据手册

PD-97847B

IRHF67234

RADIATION HARDENED

POWER MOSFET

THRU-HOLE TO-205AF (TO-39)

250V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHF67234

IRHF63234

100 kRads(Si)

300 kRads(Si)

9.5A

0.25

TO-39

Description

Features

 Low R_DS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

IR HiRel R6 technology provides superior power

MOSFETs for space applications. These devices have

improved immunity to Single Event Effect (SEE) and have

been characterized for useful performance with Linear

Energy Transfer (LET) up to 90MeV/(mg/cm²). Their

combination of very low R_DS(on)and faster switching times

reduces power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control and temperature stability of electrical

parameters.

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

9.5

6.0

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.35

± 20

V_GS

E_AS

I_AR

9.5

4.4

5.3

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

Weight

For Footnotes, refer to the page 2.

2018-12-10

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHF67234相关器件

型号	品牌	获取价格	描述	数据表
IRHF67234SCS	INFINEON	获取价格	Rad hard, 250V, 9.5A, single, N-channel MOSFET, R6 in a TO-205AF package - TO-205AF, 100 k
IRHF6S7230	INFINEON	获取价格	Rad hard, 200V, 9.1A, single, N-channel MOSFET, R6 in a TO-205AF package - TO-205AF, 100 k
IRHF6S7230SCS	INFINEON	获取价格	Rad hard, 200V, 9.1A, single, N-channel MOSFET, R6 in a TO-205AF package - TO-205AF, 100 k
IRHF7110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF7110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Me
IRHF7110SCS	INFINEON	获取价格	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Me
IRHF7110SCV	INFINEON	获取价格	暂无描述
IRHF7130	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHF7130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met
IRHF7210	INFINEON	获取价格	Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me

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