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IRHF6S7230SCS PDF预览

IRHF6S7230SCS

更新时间: 2024-11-19 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 429K
描述
Rad hard, 200V, 9.1A, single, N-channel MOSFET, R6 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QIRL

IRHF6S7230SCS 数据手册

 浏览型号IRHF6S7230SCS的Datasheet PDF文件第2页浏览型号IRHF6S7230SCS的Datasheet PDF文件第3页浏览型号IRHF6S7230SCS的Datasheet PDF文件第4页浏览型号IRHF6S7230SCS的Datasheet PDF文件第5页浏览型号IRHF6S7230SCS的Datasheet PDF文件第6页浏览型号IRHF6S7230SCS的Datasheet PDF文件第7页 
PD-97856A  
IRHF6S7230  
200V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
TECHNOLOGY  
R
6
Product Summary  
Part Number  
IRHF6S7230  
IRHF6S3230  
Radiation Level RDS(on)  
ID  
100 kRads(Si)  
300 kRads(Si)  
9.1A  
9.1A  
0.145  
0.145  
Description  
Features  
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
ESD Rating: Class 3A per MIL-STD-750, Method 1020  
IR HiRel R6 S-line technology provides high performance  
power MOSFETs for space applications. These devices have  
been characterized for both Total Dose and Single Event  
Effect (SEE) with useful performance up to LET of 60 (MeV/  
(mg/cm2). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications  
such as DC-DC converters and motor controllers. These  
devices retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Absolute Maximum Ratings  
Parameter  
Pre-Irradiation  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
9.1  
A
5.7  
36.4  
25  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
0.2  
± 20  
23  
VGS  
EAS  
IAR  
mJ  
A
9.1  
2.5  
4.8  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
0.98 (Typical)  
Weight  
For footnotes refer to the page 2.  
1
2018-12-10  
International Rectifier HiRel Products, Inc.  

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