Datasheet > IRHF67130SCS

IRHF67130SCS

更新时间： 2024-11-07 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	2581K
描述
Rad hard, 100V, 12A, single, N-channel MOSFET, R6 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QIRL

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IRHF67130SCS 数据手册

PD-97304

IRHF67130

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

TECHNOLOGY

Product Summary

Part Number

IRHF67130

IRHF63130

Radiation Level RDS(on)

I_D

100 kRads(Si)

300 kRads(Si)

12A*

0.065

TO-39

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

IR HiRel R6 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 90

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, and temperature stability of

electrical parameters.

 Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Units

Symbol

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

Value

Parameter

12*

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.35

± 20

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

4.4

5.3

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

Weight

* Current is limited by package

For footnotes refer to the page 2.

International Rectifier HiRel Products, Inc.

2019-07-03

12 3 4 5 6 7...9

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