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IRHF58130PBF PDF预览

IRHF58130PBF

更新时间: 2024-11-21 10:07:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 179K
描述
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

IRHF58130PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HERMETIC SEALED, MODIFIED TO-39, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
其他特性:AVALANCHE RATED雪崩能效等级(Eas):173 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):11.7 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-205AF
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):47 A
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHF58130PBF 数据手册

 浏览型号IRHF58130PBF的Datasheet PDF文件第2页浏览型号IRHF58130PBF的Datasheet PDF文件第3页浏览型号IRHF58130PBF的Datasheet PDF文件第4页浏览型号IRHF58130PBF的Datasheet PDF文件第5页浏览型号IRHF58130PBF的Datasheet PDF文件第6页浏览型号IRHF58130PBF的Datasheet PDF文件第7页 
                                                                         
PD-93789F  
IRHF57130  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
JANSR2N7493T2  
100V, N-CHANNEL  
REF: MIL-PRF-19500/701  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHF57130  
IRHF53130  
IRHF54130  
IRHF58130  
100K Rads (Si)  
300K Rads (Si)  
500K Rads (Si)  
0.08Ω  
0.08Ω  
0.08Ω  
11.7A JANSR2N7493T2  
11.7A JANSF2N7493T2  
11.7A JANSG2N7493T2  
11.7A JANSH2N7493T2  
1000K Rads (Si) 0.10Ω  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Identical Pre- & Post-Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
11.7  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
7.4  
47  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
173  
mJ  
A
AS  
I
11.7  
2.5  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
mJ  
V/ns  
4.9  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
10/27/11  

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