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IRHF58230

更新时间: 2024-11-04 23:15:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 131K
描述
RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39)

IRHF58230 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
其他特性:AVALANCHE RATED雪崩能效等级(Eas):110 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):7.3 A最大漏极电流 (ID):7.3 A
最大漏源导通电阻:0.22 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-205AFJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):29 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHF58230 数据手册

 浏览型号IRHF58230的Datasheet PDF文件第2页浏览型号IRHF58230的Datasheet PDF文件第3页浏览型号IRHF58230的Datasheet PDF文件第4页浏览型号IRHF58230的Datasheet PDF文件第5页浏览型号IRHF58230的Datasheet PDF文件第6页浏览型号IRHF58230的Datasheet PDF文件第7页 
93788A  
PD -  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
IRHF57230  
200V, N-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHF57230  
IRHF53230  
IRHF54230  
IRHF58230  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.22Ω  
0.22Ω  
0.22Ω  
7.3A  
7.3A  
7.3A  
1000K Rads (Si) 0.2757.3A  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
7.3  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
4.5  
29  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
110  
mJ  
A
AS  
I
7.3  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
7.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
07/15/02  

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