Datasheet > IRHF593230

IRHF593230

更新时间： 2024-11-05 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	124K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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技术参数
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IRHF593230 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

IRHF593230 数据手册

PD - 94450

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

IRHF597230

200V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHF597230

IRHF593230

100K Rads (Si) 0.54Ω -4.5A

300K Rads (Si) 0.54Ω -4.5A

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

T0-39

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-4.5

-3.0

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-18

@ T = 25°C

W/°C

Linear Derating Factor

0.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

157

-4.5

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

2.5

V/ns

dv/dt

-25

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in/1.6mm from case for 10s )

0.98 ( Typical )

For footnotes refer to the last page

www.irf.com

06/18/02

12 3 4 5 6 7 8

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