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IRHF57Z30SCSPBF

更新时间： 2024-11-20 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	138K
描述
Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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IRHF57Z30SCSPBF 数据手册

ꢁ

PD - 93793E

IRHF57Z30

JANSR2N7491T2

30V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

^{REF: MIL}5^{-PRF-19500/701}

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHF57Z30

IRHF53Z30

IRHF54Z30

100K Rads (Si) 0.045Ω 12A* JANSR2N7491T2

300K Rads (Si) 0.045Ω 12A* JANSF2N7491T2

500K Rads (Si) 0.045Ω 12A* JANSG2N7491T2

IRHF58Z30 1000K Rads (Si) 0.056Ω 12A* JANSH2N7491T2

TO-39

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Identical Pre and Post Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Electrically Isolated

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

12*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.2

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

520

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

2.5

V/ns

dv/dt

3.0

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 ( 0.063 in./1.6mm from case for 10s)

0.98 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

04/25/06

12 3 4 5 6 7 8

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与IRHF57Z30SCSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHF58034	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF58034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHF58034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
IRHF58130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF58130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M
IRHF58230	INFINEON	获取价格	RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF58Z30	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF58Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHF593110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF593110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Met

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