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IRHF57Z30SCSPBF PDF预览

IRHF57Z30SCSPBF

更新时间: 2024-11-05 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 138K
描述
Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

IRHF57Z30SCSPBF 数据手册

 浏览型号IRHF57Z30SCSPBF的Datasheet PDF文件第2页浏览型号IRHF57Z30SCSPBF的Datasheet PDF文件第3页浏览型号IRHF57Z30SCSPBF的Datasheet PDF文件第4页浏览型号IRHF57Z30SCSPBF的Datasheet PDF文件第5页浏览型号IRHF57Z30SCSPBF的Datasheet PDF文件第6页浏览型号IRHF57Z30SCSPBF的Datasheet PDF文件第7页 
                                                                             
PD - 93793E  
IRHF57Z30  
JANSR2N7491T2  
30V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
REF: MIL5-PRF-19500/701  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHF57Z30  
IRHF53Z30  
IRHF54Z30  
100K Rads (Si) 0.04512A* JANSR2N7491T2  
300K Rads (Si) 0.04512A* JANSF2N7491T2  
500K Rads (Si) 0.04512A* JANSG2N7491T2  
IRHF58Z30 1000K Rads (Si) 0.05612A* JANSH2N7491T2  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Identical Pre and Post Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Electrically Isolated  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
12*  
10  
48  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
520  
mJ  
A
AS  
I
12  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
3.0  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 ( 0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/25/06  

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