IRHF57230SEPBF

更新时间： 2024-02-22 15:18:01

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	131K
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IRHF57230SEPBF 数据手册

93788A

PD -

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

IRHF57230

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHF57230

IRHF53230

IRHF54230

IRHF58230

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.22Ω

7.3A

1000K Rads (Si) 0.275Ω 7.3A

TO-39

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

7.3

= 12V, T = 100°C Continuous Drain Current

4.5

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.2

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

110

7.3

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

2.5

V/ns

dv/dt

7.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in./1.6mm from case for 10s)

0.98 (Typical)

For footnotes refer to the last page

www.irf.com

07/15/02

12 3 4 5 6 7 8

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