Datasheet > IRHF57214SE

IRHF57214SE

更新时间： 2024-11-05 03:35:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	213K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHF57214SE 数据手册

ꢁ

PD-97063

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

IRHF57214SE

250V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHF57214SE 100K Rads (Si)

1.55Ω

2.2A

TO-39

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

2.2

= 12V, T = 100°C Continuous Drain Current

1.4

8.8

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.12

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

2.2

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

1.5

V/ns

dv/dt

13.8

-55 to 150

Storage Temperature Range

°C

STG

Lead Temperature

Weight

300 (0.063 in./1.6mm from case for 10s)

0.98 (Typical)

For footnotes refer to the last page

www.irf.com

06/05/07

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHF57214SE相关器件

型号	品牌	获取价格	描述	数据表
IRHF57214SESCS	INFINEON	获取价格	Rad hard, 250V, 2.2A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k
IRHF57230	INFINEON	获取价格	RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF57230PBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRHF57230SCS	INFINEON	获取价格	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRHF57230SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
IRHF57230SEPBF	INFINEON	获取价格	暂无描述
IRHF57230SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Meta
IRHF57230SESCSPBF	INFINEON	获取价格	暂无描述
IRHF57234SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF57234SESCS	INFINEON	获取价格	Rad hard, 250V, 5.4A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k