5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> IRHF57230SCS
IRHF57230SCS PDF预览

IRHF57230SCS

更新时间： 2024-11-05 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 131K
描述
Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

阅读下载

中文翻译

获取价格

IRHF57230SCS 数据手册

 浏览型号IRHF57230SCS的Datasheet PDF文件第2页浏览型号IRHF57230SCS的Datasheet PDF文件第3页浏览型号IRHF57230SCS的Datasheet PDF文件第4页浏览型号IRHF57230SCS的Datasheet PDF文件第5页浏览型号IRHF57230SCS的Datasheet PDF文件第6页浏览型号IRHF57230SCS的Datasheet PDF文件第7页 
93788A  
PD -  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
IRHF57230  
200V, N-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHF57230  
IRHF53230  
IRHF54230  
IRHF58230  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.22Ω  
0.22Ω  
0.22Ω  
7.3A  
7.3A  
7.3A  
1000K Rads (Si) 0.275Ω 7.3A  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
7.3  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
4.5  
29  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
110  
mJ  
A
AS  
I
7.3  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
7.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
07/15/02  
12345678

中文翻译

下载PDF

与IRHF57230SCS相关器件

型号 品牌 获取价格 描述 数据表
IRHF57230SE INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
IRHF57230SEPBF INFINEON

获取价格

 		暂无描述
IRHF57230SESCS INFINEON

获取价格

 		Power Field-Effect Transistor, 7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Meta
IRHF57230SESCSPBF INFINEON

获取价格

 		暂无描述
IRHF57234SE INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF57234SESCS INFINEON

获取价格

 		Rad hard, 250V, 5.4A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k
IRHF57Z30 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF57Z30PBF INFINEON

获取价格

 		暂无描述
IRHF57Z30SCSPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRHF58034 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

与IRHF57230SCS相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证