型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF57230 | INFINEON |
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RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF57230PBF | INFINEON |
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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF57230SCS | INFINEON |
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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF57230SE | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) | |
IRHF57230SEPBF | INFINEON |
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暂无描述 | |
IRHF57230SESCS | INFINEON |
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Power Field-Effect Transistor, 7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHF57230SESCSPBF | INFINEON |
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暂无描述 | |
IRHF57234SE | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF57234SESCS | INFINEON |
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Rad hard, 250V, 5.4A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k | |
IRHF57Z30 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |