是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 164 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 130 V | 最大漏极电流 (ID): | 10.5 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 42 A |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF57214SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF57214SESCS | INFINEON |
获取价格 |
Rad hard, 250V, 2.2A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k | |
IRHF57230 | INFINEON |
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RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF57230PBF | INFINEON |
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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF57230SCS | INFINEON |
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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF57230SE | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) | |
IRHF57230SEPBF | INFINEON |
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暂无描述 | |
IRHF57230SESCS | INFINEON |
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Power Field-Effect Transistor, 7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHF57230SESCSPBF | INFINEON |
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暂无描述 | |
IRHF57234SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |