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IRHF57133SEPBF PDF预览

IRHF57133SEPBF

更新时间: 2024-11-05 20:09:27
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 181K
描述
Power Field-Effect Transistor, 10.5A I(D), 130V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, LEAD FREE, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

IRHF57133SEPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
风险等级:5.7其他特性:AVALANCHE RATED
雪崩能效等级(Eas):164 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:130 V最大漏极电流 (ID):10.5 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-205AFJESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):42 A
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHF57133SEPBF 数据手册

 浏览型号IRHF57133SEPBF的Datasheet PDF文件第2页浏览型号IRHF57133SEPBF的Datasheet PDF文件第3页浏览型号IRHF57133SEPBF的Datasheet PDF文件第4页浏览型号IRHF57133SEPBF的Datasheet PDF文件第5页浏览型号IRHF57133SEPBF的Datasheet PDF文件第6页浏览型号IRHF57133SEPBF的Datasheet PDF文件第7页 
                                                                            
PD - 94334B  
IRHF57133SE  
JANSR2N7497T2  
130V, N-CHANNEL  
REF: MIL-PRF-19500/706  
TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
5
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHF57133SE 100K Rads (Si)  
0.110.5A JANSR2N7497T2  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
10.5  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
6.5  
42  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
164  
mJ  
A
AS  
I
10.5  
2.5  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
mJ  
V/ns  
8.0  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
06/16/04  

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