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IRHF57130PBF PDF预览

IRHF57130PBF

更新时间: 2024-11-05 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 116K
描述
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IRHF57130PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HERMETIC SEALED, MODIFIED TO-39, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
其他特性:AVALANCHE RATED雪崩能效等级(Eas):173 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):11.7 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-205AF
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):47 A
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHF57130PBF 数据手册

 浏览型号IRHF57130PBF的Datasheet PDF文件第2页浏览型号IRHF57130PBF的Datasheet PDF文件第3页浏览型号IRHF57130PBF的Datasheet PDF文件第4页浏览型号IRHF57130PBF的Datasheet PDF文件第5页浏览型号IRHF57130PBF的Datasheet PDF文件第6页浏览型号IRHF57130PBF的Datasheet PDF文件第7页 
PD - 93789A  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
IRHF57130  
100V, N-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHF57130  
IRHF53130  
IRHF54130  
IRHF58130  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.0811.7A  
0.0811.7A  
0.0811.7A  
1000K Rads (Si) 0.1011.7A  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n Single Event Effect (SEE) Hardened  
n Ultra Low RDS(on)  
n Neutron Tolerant  
n Identical Pre- and Post-Electrical Test Conditions  
n Repetitive Avalanche Ratings  
n
Dynamic dv/dt Ratings  
n Simple Drive Requirements  
n Ease of Paralleling  
n Hermetically Sealed  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
11.7  
7.4  
47  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
±20  
V
GS  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
173  
11.7  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
4.9  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
Lead Temperature  
Weight  
300 (0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
g
For footnotes refer to the last page  
www.irf.com  
1
3/2/00  

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