是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, MODIFIED TO-39, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.72 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 173 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 11.7 A | 最大漏源导通电阻: | 0.08 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 47 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF57133SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF57133SEPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10.5A I(D), 130V, 0.1ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF57214SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF57214SESCS | INFINEON |
获取价格 |
Rad hard, 250V, 2.2A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k | |
IRHF57230 | INFINEON |
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RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF57230PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF57230SCS | INFINEON |
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Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF57230SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) | |
IRHF57230SEPBF | INFINEON |
获取价格 |
暂无描述 | |
IRHF57230SESCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Meta |