IRFZ34E

更新时间： 2024-11-20 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	122K
描述
HEXFET POWER MOSFET

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中文翻译

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IRFZ34E 数据手册

PD - 9.1672A

IRFZ34E

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

_DSS= 60V

R_DS(on)= 0.042Ω

l Ease of Paralleling

Description

I_D= 28A

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

112

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.46

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.8

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

Typ.

––––

0.50

Max.

2.2

Units

R_θJC

R_θCS

R_θJA

––––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

––––

°C/W

––––

11/4/97

12 3 4 5 6 7 8

中文翻译

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