Datasheet > IRFS250A

IRFS250A

更新时间： 2024-09-17 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管脉冲局域网
页数	文件大小	规格书
7页	258K
描述
Advanced Power MOSFET

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中文翻译

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IRFS250A 数据手册

IRFS250A

Advanced Power MOSFET

FEATURES

BV_DSS= 200 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.085

I_D= 21.3 A

Improved Gate Charge

Extended Safe Operating Area

TO-3PF

Lower Leakage Current : 10 A (Max.) @ V_DS= 200V

Low R_DS(ON): 0.071 (Typ.)

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

Units

V_DSS

Drain-to-Source Voltage

200

21.3

13.5

130

^oC

Continuous Drain Current (T_C=25

Continuous Drain Current (T_C=100

Drain Current-Pulsed

)

I_D

)

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

605

21.3

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25^o

V/ns

5.0

)

P_D

T_J, T_STG

T_L

Linear Derating Factor

0.72

W/^oC

Operating Junction and

- 55 to +150

300

Storage Temperature Range

^oC

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

Thermal Resistance

Symbol

R_q_JC

Characteristic

Typ.

Max.

Units

1.38

Junction-to-Case

^oC/W

R_q_JA

Junction-to-Ambient

Rev. B

12 3 4 5 6 7

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与IRFS250A相关器件

型号	品牌	获取价格	描述	数据表
IRFS250B	FAIRCHILD	获取价格	200V N-Channel MOSFET
IRFS251	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20.7A I(D) \| SOT-186VAR
IRFS252	SAMSUNG	获取价格	Power Field-Effect Transistor, 17.3A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, M
IRFS253	SAMSUNG	获取价格	Power Field-Effect Transistor, 17.3A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, M
IRFS254	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 16A I(D) \| TO-247VAR
IRFS254A	SAMSUNG	获取价格	Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Met
IRFS254B	FAIRCHILD	获取价格	250V N-Channel MOSFET
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