Datasheet > IRFS3107-7P

IRFS3107-7P

更新时间： 2023-09-03 20:30:17

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	327K
描述
75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7 引脚封装

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中文翻译

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数据手册

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IRFS3107-7P 数据手册

IRFS3107-7PPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

max.

75V

2.1m

Ω

2.6mΩ

260A

240A

l Hard Switched and High Frequency Circuits

I_D

I_{D (Package Limited)}

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

260

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V

190

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

240

1060

370

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

2.5

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

320

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_θ

Junction-to-Case

R_θ

–––

Junction-to-Ambient (PCB Mount)

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January 28, 2014

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