Datasheet > IRFS3107-7P

IRFS3107-7P

更新时间： 2024-11-25 11:12:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	327K
描述
75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7 引脚封装

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFS3107-7P 数据手册

IRFS3107-7PPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

max.

75V

2.1m

Ω

2.6mΩ

260A

240A

l Hard Switched and High Frequency Circuits

I_D

I_{D (Package Limited)}

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

260

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V

190

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

240

1060

370

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

2.5

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

320

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_θ

Junction-to-Case

R_θ

–––

Junction-to-Ambient (PCB Mount)

Submit Datasheet Feedback

January 28, 2014

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRFS3107-7P相关器件

型号	品牌	获取价格	描述	数据表
IRFS3107-7PPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS3107PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS3107TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Me
IRFS3107TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Me
IRFS31N20D	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
IRFS31N20DHR	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRFS31N20DPBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = 200V , RDS(on)ma
IRFS31N20DTRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 31A I(D) \| TO-263AB
IRFS31N20DTRLP	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRFS31N20DTRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 31A I(D) \| TO-263AB