Datasheet > IRFS30N20DTRRPBF

IRFS30N20DTRRPBF

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	138K
描述
Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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IRFS30N20DTRRPBF 数据手册

PD- 93832

IRFB30N20D

IRFS30N20D

IRFL30N20D

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

200V

R_DS(on)max

I_D

30A

0.082Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRFS30N20D

TO-262

IRFL30N20D

TO-220AB

IRFB30N20D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

120

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.1

Power Dissipation

200

Linear Derating Factor

1.3

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

2.1

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies

l Telecom 48V Input Forward Converters

Notes through are on page 11

www.irf.com

1/3/2000

12 3 4 5 6 7...11

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