Datasheet > IRFS3004-7P

IRFS3004-7P

更新时间： 2024-11-25 14:55:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	495K
描述
40V 单个 N 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pak 封装

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中文翻译

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数据手册
替代型号

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IRFS3004-7P 数据手册

PD - 97378A

IRFS3004-7PPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

V_DSS

R_DS(on)typ.

40V

0.90m

1.25m

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

Ω

max.

I_D

400A

(Silicon Limited)

Benefits

240A

(Package Limited)

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

400

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

280

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

240

1610

380

P_D@T_C= 25°C

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

2.0

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

290

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_θ

Junction-to-Case

R_θ

–––

Junction-to-Ambient (PCB Mount)

www.irf.com

04/22/2010

12 3 4 5 6 7...10

中文翻译

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IRFS3004-7P 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFS3004-7TRR	INFINEON	功能相似	Advanced Process Technology Ultra Low On-Resistance
AUIRFS3004-7P	INFINEON	功能相似	Advanced Process Technology Ultra Low On-Resistance

与IRFS3004-7P相关器件

型号	品牌	获取价格	描述	数据表
IRFS3004-7PPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS3004PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS3004TRL-7P	INFINEON	获取价格	Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon,
IRFS3004TRL7PP	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS3004TRL-7PPBF	INFINEON	获取价格	Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon,
IRFS3004TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon,
IRFS3006	INFINEON	获取价格	60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装
IRFS3006-7P	INFINEON	获取价格	60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7
IRFS3006-7PPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS3006PBF	INFINEON	获取价格	HEXFET Power MOSFET