是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | LEAD FREE, D2PAK-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.13 |
雪崩能效等级(Eas): | 320 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 270 A | 最大漏极电流 (ID): | 195 A |
最大漏源导通电阻: | 0.0025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 375 W |
最大脉冲漏极电流 (IDM): | 1080 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | MATTE TIN OVER NICKEL | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFS3006TRLPBF | INFINEON |
类似代替 ![]() |
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M |
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AUIRFS3006 | INFINEON |
类似代替 ![]() |
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M |
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IRFS3206PBF | INFINEON |
类似代替 ![]() |
HEXFET Power MOSFET |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS3006TRL7PP | INFINEON |
获取价格 |
Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, M |
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IRFS3006TRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M |
![]() |
IRFS3006TRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M |
![]() |
IRFS30N20D | ETC |
获取价格 |
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|
IRFS30N20DTRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me |
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IRFS30N20DTRR | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-263AB |
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IRFS30N20DTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me |
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IRFS3107 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Me |
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IRFS3107-7P | INFINEON |
获取价格 |
75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7 |
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IRFS3107-7PPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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