Datasheet > IRFS3004TRL-7P

IRFS3004TRL-7P

更新时间： 2024-09-18 05:31:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	496K
描述
Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-7

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IRFS3004TRL-7P 数据手册

PD - 97378

IRFS3004-7PPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

V_DSS

R_DS(on)typ.

40V

0.90m

1.25m

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

Ω

max.

I_D

400A

(Silicon Limited)

Benefits

240A

(Package Limited)

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

400c

280c

240

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

1610

P_D@T_C= 25°C

380

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

2.0

Peak Diode Recovery f

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

290

Avalanche Currentꢀd

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy d

E_AR

Thermal Resistance

Symbol

Parameter

Junction-to-Case kl

Typ.

–––

Max.

0.40

Units

°C/W

R_θJC

R_θJA

–––

Junction-to-Ambient (PCB Mount) j

www.irf.com

02/26/09

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