是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3PF | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 480 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 10.2 A | 最大漏极电流 (ID): | 10.2 A |
最大漏源导通电阻: | 0.28 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 73 W |
最大脉冲漏极电流 (IDM): | 40.8 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS250 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRFS250A | INFINEON |
获取价格 |
Advanced Power MOSFET | |
IRFS250B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRFS251 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20.7A I(D) | SOT-186VAR | |
IRFS252 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 17.3A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, M | |
IRFS253 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 17.3A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, M | |
IRFS254 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) | TO-247VAR | |
IRFS254A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Met | |
IRFS254B | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
IRFS254B_FP001 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |