IRFR3303TRLPBF

更新时间： 2024-09-13 12:56:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	256K
描述
Ultra Low On-Resistance

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数据手册
替代型号

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IRFR3303TRLPBF 数据手册

PD - 95070A

IRFR3303PbF

IRFU3303PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Surface Mount (IRFR3303)

l Straight Lead (IRFU3033)

l Advanced Process Technology

l Fast Switching

V_DSS= 30V

R_DS(on)= 0.031Ω

l Fully Avalanche Rated

l Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, orwavesolderingtechniques. Thestraight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

D-Pak

TO-252AA

I-Pak

TO-251AA

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

33ꢀ

21ꢀ

120

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.45

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.7

V/ns

5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

2.2

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

www.irf.com

12/14/04

12 3 4 5 6 7...11

中文翻译

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IRFR3303TRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR3303TRPBF	INFINEON	类似代替	Ultra Low On-Resistance

与IRFR3303TRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR3303TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR3303TRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 33A I(D) \| TO-252AA
IRFR330A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 4.5A I(D) \| TO-252AA
IRFR330B	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRFR330BTM	ROCHESTER	获取价格	4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
IRFR330BTM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRFR3410	INFINEON	获取价格	Power MOSFET
IRFR3410	KERSEMI	获取价格	Low Gate-to-Drain Charge to Reduce Switching Losses
IRFR3410	FREESCALE	获取价格	HEXFET Power MOSFET
IRFR3410PBF	KERSEMI	获取价格	High frequency DC-DC converters