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IRFR3411TRPBF PDF预览

IRFR3411TRPBF

更新时间: 2024-11-05 12:06:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
10页 293K
描述
 Advanced Process Technology

IRFR3411TRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, DPAK-3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.66Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):185 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):32 A
最大漏极电流 (ID):32 A最大漏源导通电阻:0.044 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):130 W
最大脉冲漏极电流 (IDM):110 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR3411TRPBF 数据手册

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PD - 95371B  
IRFR3411PbF  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
IRFU3411PbF  
HEXFET® Power MOSFET  
D
VDSS = 100V  
l Fully Avalanche Rated  
l Lead-Free  
RDS(on) = 44mΩ  
G
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifier utilize advanced processing techniques to  
achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and  
ruggedizeddevicedesignthatHEXFETpowerMOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in a wide  
variety of applications.  
ID = 32A  
S
The D-Pak is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The  
straight lead, I-Pak, version (IRFU series) is for through-  
hole mounting applications. Power dissipation levels up  
to 1.5 watts are possible in typical surface mount  
applications.  
D-Pak  
IRFR3411PbF  
I-Pak  
IRFU3411PbF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
32  
23  
A
110  
130  
0.83  
± 20  
16  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
IAR  
Gate-to-Source Voltage  
Avalanche Current  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
13  
mJ  
V/ns  
7.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
Typ.  
–––  
–––  
–––  
Max.  
1.2  
50  
Units  
RθJC  
RθJA  
RθJA  
°C/W  
110  
www.irf.com  
1
09/16/10  

IRFR3411TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3411PBF INFINEON

类似代替

HEXFET Power MOSFET
IRFR3411 INFINEON

功能相似

HEXFET Power MOSFET

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