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IRFR3504ZTRL

更新时间： 2024-11-20 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 592K
描述
Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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IRFR3504ZTRL 数据手册

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PD - 94499A  
IRFR3504  
IRFU3504  
AUTOMOTIVE MOSFET  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
D
VDSS = 40V  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 9.2mΩ  
G
Description  
SpecificallydesignedforAutomotiveapplications,thisHEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieve extremely low on-resistance per silicon area. Addi-  
tional features of this product are a 175°C junction operating  
temperature, fast switching speed and improved repetitive  
avalanche rating. These features combine to make this design  
an extremely efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
ID = 30A  
S
The D-Pak is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU series) is for through-hole mounting  
applications. Power dissipation levels up to 1.5 watts are  
possible in typical surface mount applications.  
D-Pak  
IRFR3504  
I-Pak  
IRFU3504  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon limited)  
Continuous Drain Current, VGS @ 10V (See Fig.9)  
Continuous Drain Current, VGS @ 10V (Package limited)  
Pulsed Drain Current   
87  
61  
A
30  
350  
PD @TC = 25°C  
Power Dissipation  
140  
W
W/°C  
V
Linear Derating Factor  
0.92  
VGS  
Gate-to-Source Voltage  
20  
EAS  
Single Pulse Avalanche Energy‚  
Single Pulse Avalanche Energy Tested Value‡  
Avalanche Current  
240  
480  
mJ  
EAS (tested)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy†  
Operating Junction and  
mJ  
TJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.09  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)ˆ  
°C/W  
Junction-to-Ambient  
110  
HEXFET(R) is a registered trademark of International Rectifier.  
www.irf.com  
1
12/11/02  
1234567...11

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