IRFR3518PBF

更新时间： 2024-11-20 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
10页	225K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

技术参数
数据手册
替代型号

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IRFR3518PBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	LEAD FREE, PLASTIC, DPAK-3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.08
Is Samacsys：	N	Base Number Matches：	1

IRFR3518PBF 数据手册

PD - 95510A

IRFR3518PbF

IRFU3518PbF

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

l Lead-Free

V_DSS

80V

R_DS(on)max

I_D

30A

29mW

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3518

I-Pak

IRFU3518

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 20

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

150

P_D@T_C= 25°C

Power Dissipation

110

Linear Derating Factor

0.71

W/°C

V/ns

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

5.2

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Junction-to-Case

–––

1.4

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

12/03/04

12 3 4 5 6 7...10

中文翻译

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IRFR3518PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR3518TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518	INFINEON	功能相似	HEXFET Power MOSFET

与IRFR3518PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR3518TR	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518TRL	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518TRLPBF	INFINEON	获取价格	暂无描述
IRFR3518TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3518TRR	INFINEON	获取价格	暂无描述
IRFR3518TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Met
IRFR3607	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
IRFR3607PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR3607TR	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
IRFR3607TRL	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met